Datasheet > T2851N

T2851N

更新时间： 2024-09-15 08:51:03

品牌	Logo	应用领域
EUPEC		/
页数	文件大小	规格书
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描述
Phase Control Thyristor

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中文翻译

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数据手册

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T2851N 数据手册

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T 2851N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

4800

5200

5000 V

T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

^PerK^iode^isn^cn^heda^Vt^oe^rwn^{ärts- und Rückwärts-Spitzensperrspannung}

^{repetitive peak forward off-state and re}E^verl^se^{e v}k^oltt^agr^eische Eigenschaften

6230 A

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

I_TRMSM

3000 A

3970 A

Dauergrenzstrom

average on-state current

T_C= 85 °C

T_C= 60 °C

I_TAVM

82000 A

79000 A

Stoßstrom-Grenzwert

surge current

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I_TSM

33500 10³ A²s

31000 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

DIN IEC 60747-6

f = 50 Hz, i_GM= 3 A, di_G/dt = 6 A/µs

300 A/µs

Kritische Stromsteilheit

critical rate of rise of on-state current

(di_T/dt)_cr

(dv_D/dt)_cr

2000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter H

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

typ.

max.

1,61 V

1,7 V

T_vj= T_{vj max}, i_T= 4000A

v_T

typ. 0,728 V

max. 0,765 V

Schleusenspannung

threshold voltage

T_vj= T_{vj max}

V_(TO)

typ. 0,22 mΩ

max. 0,234 mΩ

Ersatzwiderstand

slope resistance

T_vj= T_{vj max}

r_T

typ.

-0,2562

Durchlaßkennlinie

on-state characteristic

400A ≤ i_F≤ 5000A

T_vj= T_{vj max}

0,000158

0,17664

-0,0037

max.

-1,91423

0,0004095

0,57615

-0,04425

v_T= A + B ⋅ i_T+ C ⋅ Ln(i_T+ 1) + D ⋅ i_T

350

Zündstrom

gate trigger current

T_vj= 25°C, v_D= 12 V

I_GT

V_GT

I_GD

V_GD

I_H

max.

2,5

Zündspannung

gate trigger voltage

max.

Nicht zündender Steuerstrom

gate non-trigger current

T_vj= T_{vj max}, v_D= 12 V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

20 mA

10 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

0,4 V

350 mA

3 A

Haltestrom

holding current

T_vj= 25°C, v_D= 12 V

Einraststrom

latching current

T_vj= 25°C, v_D= 12 V, R_GK≥ 10 Ω

i_GM= 3 A, di_G/dt = 6 A/µs, t_g= 20 µs

I_L

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

v_D= V_DRM, v_R= V_RRM

i_D, i_R

600 mA

2 µs

Zündverzug

DIN IEC 60747-6

t_gd

gate controlled delay time

T_vj= 25 °C,i_GM= 3 A, di_G/dt = 6 A/µs

C. Schneider

date of publication: 2006-05-05

revision:

prepared by:

approved by: J. Przybilla

BIP AM / SM PB, 2003-12-16, Schneider / Keller

Seite/page

1/9

12 3 4 5 6 7...9

中文翻译

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与T2851N相关器件

型号	品牌	获取价格	描述	数据表
T2851N42TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 4130000mA I(T), 4200V V(DRM),
T2851N42TOHXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 6500A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element,
T2851N48TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 6230A I(T)RMS, 4130000mA I(T), 4800V V(DRM), 4800V V(RRM), 1
T2851N48TOHXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 6230A I(T)RMS, 4800V V(DRM), 4800V V(RRM), 1 Element,
T2851N50TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 6230A I(T)RMS, 4130000mA I(T), 5000V V(DRM), 5000V V(RRM), 1
T2851N52TOH	INFINEON	获取价格	Silicon Controlled Rectifier, 6230A I(T)RMS, 4130000mA I(T), 5200V V(DRM), 5200V V(RRM), 1
T2851N52TOHXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 6230A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element,
T2871N	EUPEC	获取价格	Phase Control Thyristor
T2871N80TOH	INFINEON	获取价格	T2871N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 172mm，高
T2871N80TOHXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 4120A I(T)RMS, 8000V V(DRM), 8000V V(RRM), 1 Element,

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