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T2800D-U

更新时间: 2024-11-24 13:14:19
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摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
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T2800D-U 数据手册

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Order this document  
by T2800/D  
SEMICONDUCTOR TECHNICAL DATA  
Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
Blocking Voltage to 600 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and  
Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
T2800 — Four Quadrant Gating  
TRIACs  
8 AMPERES RMS  
200 thru 600 VOLTS  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
(T = –40 to +100°C, Gate Open)  
J
V
DRM  
Volts  
T2800  
B
D
M
200  
400  
600  
RMS On-State Current  
(Conduction Angle = 360°)  
(T = +80°C)  
C
I
8
Amps  
Amps  
T(RMS)  
Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
I
100  
40  
TSM  
J
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
Peak Gate Power (Pulse Width = 1 µs)  
Average Gate Power  
P
16  
0.35  
Watts  
Watt  
Amps  
°C  
GM  
P
G(AV)  
Peak Gate Trigger Current (Pulse Width = 1 µs)  
Operating Junction Temperature Range  
Storage Temperature Range  
I
4
GTM  
T
–40 to +100  
–40 to +150  
J
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
1. V  
Symbol  
Max  
Unit  
R
2.2  
°C/W  
θJC  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
Motorola, Inc. 1995  

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