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T2800D-AD PDF预览

T2800D-AD

更新时间: 2024-11-24 13:14:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
页数 文件大小 规格书
4页 73K
描述
400V, 8A, TRIAC, TO-220AB

T2800D-AD 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.7外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:75 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:2.5 V
最大维持电流:30 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:100 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

T2800D-AD 数据手册

 浏览型号T2800D-AD的Datasheet PDF文件第2页浏览型号T2800D-AD的Datasheet PDF文件第3页浏览型号T2800D-AD的Datasheet PDF文件第4页 
Order this document  
by T2800/D  
SEMICONDUCTOR TECHNICAL DATA  
Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
Blocking Voltage to 600 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and  
Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
T2800 — Four Quadrant Gating  
TRIACs  
8 AMPERES RMS  
200 thru 600 VOLTS  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
(T = –40 to +100°C, Gate Open)  
J
V
DRM  
Volts  
T2800  
B
D
M
200  
400  
600  
RMS On-State Current  
(Conduction Angle = 360°)  
(T = +80°C)  
C
I
8
Amps  
Amps  
T(RMS)  
Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
I
100  
40  
TSM  
J
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
Peak Gate Power (Pulse Width = 1 µs)  
Average Gate Power  
P
16  
0.35  
Watts  
Watt  
Amps  
°C  
GM  
P
G(AV)  
Peak Gate Trigger Current (Pulse Width = 1 µs)  
Operating Junction Temperature Range  
Storage Temperature Range  
I
4
GTM  
T
–40 to +100  
–40 to +150  
J
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
1. V  
Symbol  
Max  
Unit  
R
2.2  
°C/W  
θJC  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
Motorola, Inc. 1995  

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