T2500N-U

更新时间： 2024-11-13 13:14:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅三端双向交流开关
页数	文件大小	规格书
4页	73K
描述
800V, 6A, TRIAC, TO-220AB

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中文翻译

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技术参数
数据手册

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T2500N-U 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.63	外壳连接：	MAIN TERMINAL 2
配置：	SINGLE	最大直流栅极触发电流：	25 mA
最大直流栅极触发电压：	2.5 V	最大维持电流：	30 mA
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	100 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	6 A	重复峰值关态漏电流最大值：	2000 µA
断态重复峰值电压：	800 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	TRIAC	Base Number Matches：	1

T2500N-U 数据手册

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by T2500/D

SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies.

•

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

TRIACs

6 AMPERES RMS

200 thru 800 VOLTS

•

MT2

MT1

CASE 221A-04

(TO-220AB)

STYLE 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Repetitive Peak Off-State Voltage

(T = –40 to +100°C, Gate Open)

DRM

Volts

T2500 B

200

400

600

800

On-State Current RMS

(Full Cycle Sine Wave 50 to 60 Hz)

(T = +80°C)

0.2

Amps

T(RMS)

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, T = +80°C)

TSM

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

Peak Gate Power

(T = +80°C, Pulse Width = 1 µs)

Watts

Watt

Average Gate Power

(T = +80°C, t = 8.3 ms)

G(AV)

Peak Gate Trigger Current (Pulse Width = 10 µs)

Operating Junction Temperature Range

Storage Temperature Range

Amps

°C

GTM

–40 to +100

–40 to +150

stg

°C

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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