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by T2500FP/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
•
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage
(T = –40 to +100°C, Gate Open)
J
V
DRM
Volts
T2500BFP
T2500DFP
T2500MFP
T2500NFP
200
400
600
800
(2)
On-State RMS Current (T = +80°C)
I
6
60
40
1
Amps
Amps
C
T(RMS)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
I
TSM
(One Full Cycle, 60 Hz, T = +80°C)
C
2
I t
2
A s
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Power
(T = +80°C, Pulse Width = 1 µs)
C
P
GM
Watt
Watt
Average Gate Power
(T = +80°C, t = 8.3 ms)
C
P
0.2
G(AV)
Peak Gate Trigger Current (Pulse Width = 10 µs)
I
4
Amps
Volts
°C
GTM
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
1500
A
ISO
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
T
J
–40 to +100
–40 to +150
T
stg
°C
Symbol
Max
Unit
(2)
Thermal Resistance, Junction to Case
Case to Sink
R
R
R
θJA
2.7
2.2(typ)
60
°C/W
θJC
θCS
Junction to Ambient
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic
C
body.
1
Motorola Thyristor Device Data
Motorola, Inc. 1995