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T2500FP

更新时间: 2024-09-23 22:20:39
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摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
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4页 87K
描述
ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS

T2500FP 数据手册

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by T2500FP/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
ISOLATED TRIACs  
THYRISTORS  
6 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and  
Stability  
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
MT2  
MT1  
CASE 221C-02  
STYLE 3  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage  
(T = –40 to +100°C, Gate Open)  
J
V
DRM  
Volts  
T2500BFP  
T2500DFP  
T2500MFP  
T2500NFP  
200  
400  
600  
800  
(2)  
On-State RMS Current (T = +80°C)  
I
6
60  
40  
1
Amps  
Amps  
C
T(RMS)  
(Full Cycle Sine Wave 50 to 60 Hz)  
Peak Non-repetitive Surge Current  
I
TSM  
(One Full Cycle, 60 Hz, T = +80°C)  
C
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
Peak Gate Power  
(T = +80°C, Pulse Width = 1 µs)  
C
P
GM  
Watt  
Watt  
Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
0.2  
G(AV)  
Peak Gate Trigger Current (Pulse Width = 10 µs)  
I
4
Amps  
Volts  
°C  
GTM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
ISO  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
J
–40 to +100  
–40 to +150  
T
stg  
°C  
Symbol  
Max  
Unit  
(2)  
Thermal Resistance, Junction to Case  
Case to Sink  
R
R
R
θJA  
2.7  
2.2(typ)  
60  
°C/W  
θJC  
θCS  
Junction to Ambient  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic  
C
body.  
Motorola, Inc. 1995  

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