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T2500DFP PDF预览

T2500DFP

更新时间: 2024-11-28 22:07:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 87K
描述
ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS

T2500DFP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.1
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:4 V/us
关态电压最小值的临界上升速率:75 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:2.5 V最大维持电流:30 mA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:2 mA元件数量:1
端子数量:3最大通态电压:2 V
最高工作温度:100 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:6 A
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

T2500DFP 数据手册

 浏览型号T2500DFP的Datasheet PDF文件第2页浏览型号T2500DFP的Datasheet PDF文件第3页浏览型号T2500DFP的Datasheet PDF文件第4页 
Order this document  
by T2500FP/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
ISOLATED TRIACs  
THYRISTORS  
6 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and  
Stability  
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
MT2  
MT1  
CASE 221C-02  
STYLE 3  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage  
(T = –40 to +100°C, Gate Open)  
J
V
DRM  
Volts  
T2500BFP  
T2500DFP  
T2500MFP  
T2500NFP  
200  
400  
600  
800  
(2)  
On-State RMS Current (T = +80°C)  
I
6
60  
40  
1
Amps  
Amps  
C
T(RMS)  
(Full Cycle Sine Wave 50 to 60 Hz)  
Peak Non-repetitive Surge Current  
I
TSM  
(One Full Cycle, 60 Hz, T = +80°C)  
C
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
Peak Gate Power  
(T = +80°C, Pulse Width = 1 µs)  
C
P
GM  
Watt  
Watt  
Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
0.2  
G(AV)  
Peak Gate Trigger Current (Pulse Width = 10 µs)  
I
4
Amps  
Volts  
°C  
GTM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
ISO  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
J
–40 to +100  
–40 to +150  
T
stg  
°C  
Symbol  
Max  
Unit  
(2)  
Thermal Resistance, Junction to Case  
Case to Sink  
R
R
R
θJA  
2.7  
2.2(typ)  
60  
°C/W  
θJC  
θCS  
Junction to Ambient  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic  
C
body.  
Motorola, Inc. 1995  

T2500DFP 替代型号

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