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T2322BG PDF预览

T2322BG

更新时间: 2024-02-09 05:22:20
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 56K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

T2322BG 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.78
Is Samacsys:NBase Number Matches:1

T2322BG 数据手册

 浏览型号T2322BG的Datasheet PDF文件第2页浏览型号T2322BG的Datasheet PDF文件第3页浏览型号T2322BG的Datasheet PDF文件第4页 
T2322B  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for ac power switching. The gate sensitivity of  
these triacs permits the use of economical transistorized or integrated  
circuit control circuits, and it enhances their use in low-power phase  
control and load-switching applications.  
http://onsemi.com  
TRIACS  
2.5 AMPERES RMS  
200 VOLTS  
Features  
Very High Gate Sensitivity  
Low On-State Voltage at High Current Levels  
Glass-Passivated Chip for Stability  
Small, Rugged Thermopad Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Pb−Free Package is Available*  
MT2  
MT1  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
(T = 25 to 110°C, Gate Open)  
J
V
V
200  
V
DRM,  
RRM  
TO−225AA  
(formerly TO−126)  
CASE 077  
On-State RMS Current (T = 70°C)  
I
2.5  
25  
A
A
C
T(RMS)  
(Full Cycle Sine Wave 50 to 60 Hz)  
STYLE 5  
3
2
Peak Non−Repetitive Surge Current (One  
I
1
TSM  
Full Cycle, Sine Wave 60 Hz, T = 70°C)  
C
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
2.6  
10  
A s  
MARKING DIAGRAM  
Peak Gate Power  
P
W
GM  
(Pulse Width 10 ms, T = 70°C)  
C
Average Gate Power (t = 8.3 ms, T = 70°C)  
P
0.5  
0.5  
W
A
YWW  
T
2322BG  
C
G(AV)  
Peak Gate Current  
I
GM  
(Pulse Width = 10 ms, T = 70°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
8.0  
°C  
°C  
J
Y
WW  
= Year  
= Work Week  
T
stg  
Mounting Torque (6-32 Screw) (Note 2)  
in. lb.  
T2322B = Device Code  
= Pb−Free Package  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
PIN ASSIGNMENT  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
1
Main Terminal 1  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or  
equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably  
lower case-to-sink thermal resistance. Main terminal 2 and heat-sink  
contact pad are common.  
2
3
Main Terminal 2  
Gate  
ORDERING INFORMATION  
Device  
T2322B  
T2322BG  
Package  
Shipping  
TO225AA  
500 Units/Box  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
TO225AA  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 5  
T2322/D  
 

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