生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 标称电路换相断开时间: | 180 µs |
关态电压最小值的临界上升速率: | 400 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 1.4 V | 最大维持电流: | 200 mA |
最大漏电流: | 30 mA | 通态非重复峰值电流: | 3500 A |
最大通态电压: | 1.93 V | 最大通态电流: | 130000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 1100 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T130N1100VOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1100V V(DRM), | |
T130N1100WOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1100V V(DRM), | |
T130N1200BOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(DRM), | |
T130N1200EOC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(DRM), | |
T130N1200EOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(DRM), | |
T130N1200VOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(DRM), | |
T130N1200WOC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(DRM), | |
T130N12BOF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 300A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E | |
T130N12EOF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 300A I(T)RMS, 130000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E | |
T130N14EOF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 300A I(T)RMS, 130000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E |