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T1235-800G-TR PDF预览

T1235-800G-TR

更新时间： 2024-02-22 19:58:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 触发装置可控硅三端双向交流开关
页数 文件大小 规格书
7页 113K
描述
12A TRIACS

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中文翻译

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T1235-800G-TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：compliant
HTS代码：8541.30.00.80风险等级：5.77
外壳连接：MAIN TERMINAL 2配置：SINGLE
关态电压最小值的临界上升速率：500 V/us最大直流栅极触发电流：35 mA
最大直流栅极触发电压：1.3 V最大维持电流：35 mA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
最大漏电流：0.005 mA元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：245认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：800 V
子类别：TRIACs表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SNUBBERLESS TRIACBase Number Matches：1

T1235-800G-TR 数据手册

 浏览型号T1235-800G-TR的Datasheet PDF文件第2页浏览型号T1235-800G-TR的Datasheet PDF文件第3页浏览型号T1235-800G-TR的Datasheet PDF文件第4页浏览型号T1235-800G-TR的Datasheet PDF文件第5页浏览型号T1235-800G-TR的Datasheet PDF文件第6页浏览型号T1235-800G-TR的Datasheet PDF文件第7页 
BTA/BTB12 and T12 Series  
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD  
12A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
12  
Unit  
I
A
V
G
T(RMS)  
V
/V  
A1  
600 and 800  
DRM RRM  
A2  
I
5 to 50  
mA  
GT (Q )  
1
DESCRIPTION  
A1  
A2  
G
Available either in through-hole or surface-mount  
packages, the BTA/BTB12 and T12 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control operation in light dimmers, motor  
speed controllers,...  
2
D PAK  
(T12-G)  
A2  
The snubberless versions (BTA/BTB...W and T12  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. Logic level versions are designed  
to interface directly with low power drivers such as  
microcontrollers. By using an internal ceramic  
pad, the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA12)  
TO-220AB  
(BTB12)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
²
I
RMS on-state current (full sine wave)  
Tc = 105°C  
D PAK/TO-220AB  
TO-220AB Ins.  
F = 50 Hz  
T(RMS)  
12  
A
A
Tc = 90°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
120  
126  
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
78  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
/V  
A/µs  
V
I
= 2 x I , tr ≤ 100 ns  
G
GT  
V
Non repetitive surge peak off-state  
voltage  
DRM RRM  
+ 100  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2002 - Ed: 6A  
1/7  
1234567

中文翻译

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T1235-800G-TR 替代型号

型号 品牌 替代类型 描述 数据表
BTA12-800BWRG STMICROELECTRONICS

类似代替

 12A TRIACS
BTA216B-800B,118 NXP

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 BTA216B-800B

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