Datasheet > T1050-8G

T1050-8G

更新时间： 2024-09-18 17:33:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
4页	63K
描述
10A - 800V - D2PAK封装Snubberless™三端双向可控硅

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中文翻译

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数据手册

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T1050-8G 数据手册

BTA10 GP

TRIACS

FEATURES

LOW I = 13mA max

HIGH SURGE CURRENT : I

= 120A

TSM

SPECIFIED IN FOUR QUADRANTS

INSULATING VOLTAGE = 2500V

(UL RECOGNIZED : E81734)

(RMS)

DESCRIPTION

The BTA10 GP’s use high performance, glass pas-

sivated chips.

The insulated TO220AB package, the high surge

current and low holding current make this family

well adapted to LIGHT DIMMER applications.

TO220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(360° conduction angle)

Tc = 90 °C

T(RMS)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

tp = 8.3 ms

tp = 10 ms

126

120

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

Repetitive

F = 50 Hz

A/µs

Gate supply : I = 500mA di /dt = 1A/µs

Non

Repetitive

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

Symbol

Parameter

BTA10-

Unit

400 GP

400

600 GP

Repetitive peak off-state voltage

Tj = 125 °C

600

DRM

RRM

1/4

March 1995

12 3 4

中文翻译

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