Datasheet > T0385HF65E

T0385HF65E

更新时间： 2024-11-21 14:57:11

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力特 - LITTELFUSE		双极性晶体管
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T0385HF65E 数据手册

Date:- 25 Feb, 2015

Data Sheet Issue:- P1

Prospective data

Insulated Gate Bi-Polar Transistor

Type T0385HF65E

Absolute Maximum Ratings

MAXIMUM

VOLTAGE RATINGS

LIMITS

UNITS

V_CES

V_{DC link}

V_GES

Collector – emitter voltage

6500

6000

3600

±20

Collector – emitter voltage (T_j25°C)

Collector – emitter voltage (T_j-40°C)

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C

DC collector current, IGBT

385

770

I_CRM

I_CEO

P_MAX

T_j

Repetitive peak collector current, t_p=1ms, IGBT

Maximum reverse emitter current, t_p=100µs, (note 2 & 3)

Maximum power dissipation, IGBT (Note 2)

Operating temperature range.

385

4.6

°C

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 650nH.

Prospective Data Sheet T0385HF65E Issue P1

Page 1 of 6

February, 2015

12 3 4 5 6 7

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