Datasheet > T0258HF65G

T0258HF65G

更新时间： 2024-09-28 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管
页数	文件大小	规格书
9页	657K
描述
作为压装IGBT技术的开创者，我们能够提供多种一流的器件，额定电压分别为1.7kV（900V直流链）、2.5kV（1.25kV直流链）、3.3kV（1.8kV直流链）、4.5kV（2.8kV直流链

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T0258HF65G 数据手册

Date:- 9 Dec, 2016

Data Sheet Issue:- 1

Insulated Gate Bi-Polar Transistor

Type T0258HF65G

Absolute Maximum Ratings

MAXIMUM

LIMITS

6500

VOLTAGE RATINGS

UNITS

V_CES

V_{DC link}

V_GES

Collector – emitter voltage

Collector – emitter voltage (T_j25°C)

Collector – emitter voltage (T_j-40°C)

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

6500

6000

3600

±20

MAXIMUM

LIMITS

258

RATINGS

UNITS

I_C

DC collector current, IGBT

I_CRM

I_F(DC)

I_FRM

I_FSM

I_FSM2

P_MAX

(di/dt)_cr

T_j

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

516

258

516

2110

2320

A/µs

°C

1000

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 1000nH.

4) Half-sinewave, 125°C T_jinitial.

Provisional Data Sheet T0258HF65G Issue 1

Page 1 of 8

December, 2016

12 3 4 5 6 7...9

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