是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | WAFER | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 应用: | GENERAL PURPOSE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | X-XUUC-N |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 150 A |
元件数量: | 1 | 相数: | 1 |
最大输出电流: | 15 A | 封装主体材料: | UNSPECIFIED |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1600 V | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | 35 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T-DWN340-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 250A, 1800V V(RRM), Silicon, WAFER |
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T-DWN347-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 400A, 1800V V(RRM), Silicon, WAFER |
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T-DWN35-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 53A, 1200V V(RRM), Silicon, WAFER |
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T-DWN35-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 53A, 1800V V(RRM), Silicon, WAFER |
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T-DWN50-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 64A, 1200V V(RRM), Silicon, WAFER |
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T-DWN50-18 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 64A, 1800V V(RRM), Silicon, WAFER |
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T-DWN5-08 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 14A, 800V V(RRM), Silicon, WAFER |
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T-DWN5-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 14A, 1200V V(RRM), Silicon, WAFER |
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T-DWN75-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 83A, 1200V V(RRM), Silicon, WAFER |
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T-DWN9-12 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 26A, 1200V V(RRM), Silicon, WAFER |
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