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SZM3166Z

更新时间： 2024-10-02 01:10:11
品牌 Logo 应用领域
威讯 - RFMD 高功率电源放大器射频微波功率放大器
页数 文件大小 规格书
12页 331K
描述
3.3GHz to 3.6GHz 2W POWER AMPLIFIER

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SZM3166Z 数据手册

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SZM-3166Z  
3.3GHz to  
3.6GHz 2W  
Power Ampli-  
fier  
SZM-3166Z  
3.3GHz to 3.6GHz 2W POWER AMPLIFIER  
Package: QFN, 6mmx6mm  
Product Description  
Features  
RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier  
housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT  
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an  
ideal combination of low cost and high reliability. This product is specifically designed for  
802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can  
run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line  
optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power  
detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator fea-  
ture can be utilized by switching the second stage Power up/down control. This product fea-  
tures a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.  
P1dB=35dBm at 5.2V  
Three Stages of Gain:35dB  
802.11g 54Mb/s Class AB Perfor-  
mance  
POUT=27dBm at 2.5% EVM, VCC  
5.2V, 900mA  
Active Bias with Adjustable Current  
On-Chip Output Power Detector  
Low Thermal Resistance  
Vcc = 5V  
Optimum Technology  
Matching® Applied  
GaAs HBT  
Power Up/Down Control <1s  
Attenuator Step 20dB at VPC2=0V  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Class 1C ESD Rating  
RFIN  
RFOUT  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Applications  
802.16 WiMAX Driver or Output  
Stage  
Stage 1  
Bias  
Stage 2  
Bias  
Stage 3  
Bias  
Vbias = 5V  
Si BJT  
Fixed Wireless, WLL  
GaN HEMT  
RF MEMS  
CPE Terminal Applications  
Power  
Detector  
Power  
Up/Down  
Control  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
3300  
Max.  
3600  
Frequency of Operation  
Output Power at 1dB Compression  
Gain  
MHz  
dBm  
dBm  
34.5  
35.0  
3.5Ghz  
3.5Ghz, P =26dBm  
32.0  
38.0  
-37  
OUT  
% EVM  
2.5  
-42  
%
3.5GHz, P =27dBm, 802.11g 54Mb/s  
OUT  
Third Order Suppression  
dBc  
3.5GHz, P =23dBm per tone  
OUT  
Noise Figure  
5.0  
14.0  
9.0  
dB  
dB  
dB  
V
3.5GHz  
2.3GHz to 3.5GHz  
2.3GHz to 3.5GHz  
Worst Case Input Return Loss  
Worst Case Output Return Loss  
Supply voltage rang  
11.0  
6.0  
5.2  
Output Voltage Range  
0.9 to 2.2  
V
P
=10dBm to 33dBm  
OUT  
Quiescent Current  
720  
800  
5.0  
880  
0.1  
mA  
mA  
  
V
V
V
=5.2V  
CC  
PC  
CC  
Power Up Control Current  
=5.2V, I  
+I  
+I  
VCP1 VPC2 VPC3  
V
Leakage Current  
=5.2V, V =0V  
PC  
CC  
Thermal Resistance  
12.0  
°C/W  
junction - lead  
Test Conditions: Z =50, V =5.2V, I =800mA, T =30°C  
0
CC  
Q
BP  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS110620  
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