Datasheet > SZM3066ZPCK-EVB1

SZM3066ZPCK-EVB1

更新时间： 2024-10-02 01:10:11

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
12页	444K
描述
3.3GHz to 3.8GHz 2W POWER AMPLIFIER

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SZM3066ZPCK-EVB1 数据手册

SZM-3066Z

3.3GHz to

3.8GHz 2W

Power Ampli-

fier

SZM-3066Z

3.3GHz to 3.8GHz 2W POWER AMPLIFIER

Package: QFN, 6mmx6mm

Product Description

Features

RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) ampli-

fier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an

ideal combination of low cost and high reliability. This product is specifically designed as a final

or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to

6V supply. The external output match and bias adjustability allows load line optimization for

other applications or over narrower bands. It features an output power detector, on/off power

control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by

switching the second stage Power up/down control. This product features a RoHS compliant

and Green package with matte tin finish, designated by the ‘Z’ suffix.

 P_1dB=33.5dBm at 5V

 Three Stages of Gain:34dB

 802.11g 54Mb/s Class AB Per-

formance

 P_OUT=26dBm at 2.5% EVM, V_CC

5V,730mA

 Active Bias with Adjustable Cur-

rent

Optimum Technology

Matching® Applied

 On-Chip Output Power Detector

 Low Thermal Resistance

GaAs HBT

GaAs MESFET

 Power Up/Down Control <1μs

InGaP HBT



SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

 Attenuator Step 20dB at

V_PC2=0V

 Class 1B ESD Rating

Applications

 802.16 WiMAX Driver or Output

Stage

Si BJT

GaN HEMT

RF MEMS

 Fixed Wireless, WLL

Specification

Parameter

Unit

Condition

Min.

Typ.

Max.

Frequency of Operation

Output Power at 1dB Compression

Gain

3300

3800

MHz

dBm

33.5

34.0

3.5GHz

@ P_OUT=26dBm-3.5GHz

32.5

Output power

Third Order Suppression

26.0

-38.0

dBm

dBc

@ 2.5% EVM 802.11g 54Mb/s - 3.5GHz

P_OUT=23dBm per tone - 3.5GHz

-33.0

Noise Figure

5.0

14.0

9.0

@ 3.6GHz

3.3GHz to 3.8GHz

Worst Case Input Return Loss

Worst Case Output Return Loss

Supply voltage range

11.0

6.0

3.0

5.0

6.0

Output Voltage Range

0.9 to 2.2

for P_OUT=10dBm to 30dBm

Quiescent Current

540

600

5.0

660

V_CC=5V

Power Up Control Current

VCC Leakage Current

Thermal Resistance

V_PC=5V, I_VPC1+I_VPC2+I_VPC3

V_CC=5V, V_PC=0V

0.1

12.0

°C/W

junction - lead

Test Conditions: 3.3GHz to 3.8GHz App circuit, Z₀=50Ω, V_CC=5V, I_Q=600mA, T_BP=30°C

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS131017

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