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SZM2166ZPCK-EVB3 PDF预览

SZM2166ZPCK-EVB3

更新时间: 2024-02-11 00:30:48
品牌 Logo 应用领域
威讯 - RFMD 放大器功率放大器
页数 文件大小 规格书
21页 849K
描述
2.3GHz to 2.7GHz 2W POWER AMPLIFIER

SZM2166ZPCK-EVB3 数据手册

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SZM-2166Z  
2.3GHz to  
2.7GHz 2W  
Power Ampli-  
fier  
SZM-2166Z  
2.3GHz to 2.7GHz 2W POWER AMPLIFIER  
Package: QFN, 6mmx6mm  
Product Description  
Features  
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier  
housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT  
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an  
ideal combination of low cost and high reliability. This product is specifically designed for  
802.16 customer premises equipment (CPE) terminals in the 2.3GHz to 2.7GHz bands. It can  
run from a 3V to 6V supply. The external output match and bias adjustability allows load line  
optimization for other applications over narrower bands. It features an output power detector,  
on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be  
utilized by switching the second stage Power up/down control. This product features a RoHS  
compliant and Green package with matte finish, designated by the “Z” suffix  
P1dB=35dBm at 6V  
Three Stages of Gain: 37dB  
802.11g 54Mb/s Class AB Per-  
formance  
POUT=27dBm at 2.5%EVM, VCC  
6V, 878mA  
Active Bias with Adjustable Cur-  
rent  
Optimum Technology  
Matching® Applied  
Vcc =5V  
On-Chip Output Power Detector  
Low Thermal Resistance  
GaAs HBT  
GaAs MESFET  
Power Up/Down Control 1s  
InGaP HBT  
SiGe BiCMOS  
Attenuator step 20dB at  
VPC2=0V  
RFIN  
RFOUT  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Stage  
Bias  
1
Stage  
Bias  
2
Stage  
Bias  
3
Vbias =5V  
Applications  
802.16 WiMAX Driver or Output  
Stage  
Pow er  
Pow er  
Up/Dow n  
Control  
Detector  
Si BJT  
GaN HEMT  
RF MEMS  
802.11b/g WiFi, WiFi  
CPE Terminal Applications  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
2300  
Max.  
2700  
Frequency of Operation  
Output Power at 1dB Compression  
Small Signal Gain  
MHz  
dBm  
dB  
35  
36  
2.7GHz  
2.7GHz  
34.5  
EVM  
2.5  
%
27dBm Output power EVM 802.11g 54Mb/s-  
2.7GHz  
Third Order Suppression  
-40  
-35  
dBc  
(P =23dBm per tone)-2.7GHz  
OUT  
Noise Figure  
8.3  
14  
14  
dB  
dB  
dB  
V
2.7GHz  
2.5GHz to 2.7GHz  
2.5GHz to 2.7GHz  
Worst Case Input Return Loss  
Worst Case Output Return Loss  
Output Voltage Range  
10  
13  
0.9 to 1.8  
P
V
V
V
=10dBm to 33dBm  
OUT  
Quiescent Current  
615  
724  
4
832  
100  
mA  
mA  
=6V  
cc  
pc  
cc  
Power Up Control Current  
=6V, I  
+I  
+I  
VPC1 VPC2 VPC3  
V
Leakage Current  
A  
=6V, V =0V  
pc  
cc  
Thermal Resistance  
12  
°C/W  
junction - lead  
Test Conditions: 2.5GHz to 2.7GHz App circuit, Z =50, V =6.0V, Iq=724mA, T =30°C  
0
cc  
BP  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS110620  
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