SZM-2066Z
2.4GHz to
2.7GHz 2W
Power Ampli-
fier
SZM-2066Z
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
Features
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
module package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.16 and
802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V
supply. The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands. It features an output power
P1dB= 33.5dBm at 5V
Three Stages of Gain:37dB
802.11g 54Mb/s Class AB Per-
formance
POUT=26dBm at 2.5% EVM, VCC
5V, 690mA
Active Bias with Adjustable Cur-
rent
detector, on/off power control and high RF overdrive robust-
Optimum Technology
Matching® Applied
ness. A 20dB step attenuator feature can be utilized by switch-
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
ing the second stage Power up/down control.
On-Chip Output Power Detector
Low Thermal Resistance
Vcc =5V
Power Up/Down Control <1s
Attenuator Step 20dB at
VPC2=0V
RFIN
RFOUT
Applications
802.16 WiMAX Driver or Output
Stage
Si BJT
Stage
Bias
1
Stage
Bias
2
Stage
Bias
3
Vbias =5V
GaN HEMT
InP HBT
802.11b/g WiFi, WiFi
Pow er
Detector
RF MEMS
LDMOS
Pow er
Up/Dow n
Control
Specification
Typ.
Parameter
Unit
Condition
Min.
2500
32.0
32.2
Max.
2700
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
EVM
MHz
dBm
dB
33.5
33.7
2.5
2.7GHz
2.7GHz
2.7GHz, 802.11g 54Mb/s at P =26dBm
%
OUT
Third Order Supression
-45.0
-40.0
dBc
2.7GHz, P =23dBm per tone
OUT
Noise Figure
7.7
10.5
15.5
dB
dB
dB
V
2.7GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
Worst Case Input Return Loss
Worst Case Output Return Loss
Output Voltage Range
7.5
12.5
0.9 to 1.8
P
=10dBm to 33dBm
OUT
Quiescent Current
454
583
4.0
659
100
mA
mA
V
V
V
=5V
CC
PC
CC
Power Up Control Current
VCC Leakage Current
Thermal Resistance
=5V, I
+I
+I
VPC1 VPC2 VPC3
A
=5V, V =0V
PC
12.0
°C/W
junction - lead
Test Conditions: Z =50, V =5V, I =583mA, T =30°C
0
CC
Q
BP
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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