Datasheet > SZA6044ZSR

SZA6044ZSR

更新时间： 2024-09-15 01:10:11

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波功率放大器
页数	文件大小	规格书
8页	222K
描述
5.1GHzto5.9GHz Â¼WATT POWER AMPLIFIER WITH ACTIVE BIAS

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SZA6044ZSR 数据手册

SZA-6044

5.1GHzto5.9

GHz ¼Watt

Power Ampli-

fier with Active

Bias

SZA-6044

5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER

WITH ACTIVE BIAS

Package: QFN, 4mmx4mm

Product Description

Features

RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor

(HBT) amplifier housed in a low-cost surface-mountable plastic package. These

HBT amplifiers are fabricated using molecular beam epitaxial growth technology

which produces reliable and consistent performance from wafer to wafer and lot to

lot. This product is specifically designed as a driver or final stage amplifier for equip-

ment in the 5.1GHzto5.9GHz band. It can run from a 3Vto5V supply. Load line

optimization for target band is possible outside the package. Its high linearity

makes it an ideal choice for multicarrier and digital applications.



Single 3V to 5V Operation



High Linearity Class A

OIP =39dBm at 5V



802.11a 54Mb/s

=17dBm at 3% EVM

OUT

3.3V

24dBm at 5V, 21dBm at

1dB

Optimum Technology

Matching® Applied



Surface Mount Plastic Pack-

age

GaAs HBT

Power Up/Down Control <1s

GaAs MESFET

InGaP HBT

Applications



SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS



OFDM

Multicarrier Applications

802.11a WiFi Driver Stage

Fixed Wireless, UNII

Si BJT

GaN HEMT

RF MEMS

Specification

Parameter

Unit

Condition

Min.

Typ.

Max.

Frequency of Operation,

Output Power at 1dB Compression

5100

5900

MHz

dBm

24.9

24.6

24.0

18.5

17.3

16.4

11.0

17.0

39.0

5.1GHz

5.5GHz

5.9GHz

5.1GHz

5.5 GHz

5.9GHz

5.1GHzto5.9GHz

22.5

17.0

26.0

20.0

Small Signal Gain

14.9

8.0

12.0

37.0

17.9

Worst Case Input Return Loss

Worst Case Output Return Loss

Output IP

dBm

per tone=+8dBm@5.9GHz

OUT

17.0

dBm

802.11a 54Mb/s POUT@3% EVM@5.9GHz,

I=165mA

OUT

Noise Figure,

7.8

9.8

5.9GHz

Total Device Current

145.0

165.0

185.0

=150mA, I

=15mA

VPC12

VBIAS CTOTAL

Thermal Resistance

°C/W

junction - lead

Test Conditions: Z =50, V =5V, I=165mA, T =30°C

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110714

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