SZA3044Z
2.7GHz to
3.8GHz 5V
1W
SZA3044Z
2.7GHz to 3.8GHz 5V 1W
POWER AMPLIFIER
Package: QFN, 4mmx4mm
Product Description
Features
RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability. This product is spe-
cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to
3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance
matching circuitry provides a 50 nominal RF input impedance. The external out-
put match and bias adjustability allows load line optimization for other applications
or over narrower bands. It features an output power detector,
P
=31dBm at 5V
1dB
802.11a 54Mb/s 2.5% EVM Per-
formance
P
PAE 14.5%
=24dBm, VCC=5V, 340mA,
OUT
P
PAE 14.5%
=25dBm, VCC=6V, 365mA,
OUT
On-Chip Output Power Detector
Optimum Technology
on/off power control and high RF overdrive robustness. This
product is available in a RoHS Compliant and Green package
Matching® Applied
Robust - Survives RF Input
Power=+15dBm
GaAs HBT
with matte tin finish, designated by the “Z” package suffix.
GaAs MESFET
On Chip ESD Protection Class 2
(2000V)
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Power Up/Down Control <1s
Pin Compatible With SZA-2044
and SZA-5044
Applications
802.16 WiMAX Driver or Output
Si BJT
Stage
GaN HEMT
RF MEMS
Fixed Wireless, WLL
Specification
Parameter
Unit
Condition
Min.
2700
29.5
Typ.
Max.
3800
Frequency of Operation
Output Power at 1dB Compression [1]
MHz
dBm
31.0
3.3GHz
28.5
22.0
22.0
30.0
24.0
24.0
24.0
-38.5
dBm
dB
dB
dBm
dBc
3.6GHz
3.4GHz
3.6GHz
Small Signal Gain
26.0
26.0
Output power
Third Order Suppression
3.4GHz, 2.5% EVM 802.11a 54Mb/s
3.6GHz, POUT=20dBm per tone
-35.5
Noise Figure
5.0
15.0
10.0
205
dB
dB
dB
mA
3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.6GHz
Worst Case Input Return Loss
Worst Case Output Return Loss
Quiescent Current
12.0
7.0
170
240
VCC=5V
Power Up Control Current
Off VCC Leakage Current
Thermal Resistance
2.7
10.0
22
mA
uA
VPC=5V, IVPC1+IVPC2
VPC=0V
100.0
°C/W
junction - lead
Test Conditions: Z0=50, VCC=5V, IQ=205mA, TBP=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS150303
1 of 11