SAMWIN
SW640
N-channel MOSFET
TO-220
Features
BVDSS : 200V
■ High ruggedness
ID
: 18A
■ RDS(ON) (Max 0.18 Ω)@VGS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.18ohm
1
2
3
2
1. Gate 2. Drain 3. Source
General Description
1
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
3
It’s typical application is TV and monitor.
Order Codes
Item
1
Sales Type
SW P 640
Marking
SW640
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
200
18
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
11.4
72
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
A
Gate to Source Voltage
± 30
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
250
mJ
mJ
V/ns
W
EAR
dv/dt
13.9
5.5
139
PD
TSTG, TJ
TL
1.1
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
TO-220
0.9
Symbol
Parameter
Unit
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
0.5
Thermal resistance, Junction to ambient
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7