Datasheet > SWP640

SWP640

更新时间： 2022-09-23 23:38:25

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	781K
描述
N-channel MOSFET

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SWP640 数据手册

SAMWIN

SW640

N-channel MOSFET

TO-220

Features

BV_DSS: 200V

■ High ruggedness

I_D

: 18A

■ R_DS(ON)(Max 0.18 Ω)@V_GS=10V

■ Gate Charge (Typ 20nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 0.18ohm

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at high efficient DC to DC converter block and SMPS.

It’s typical application is TV and monitor.

Order Codes

Item

Sales Type

SW P 640

Marking

SW640

Package

TO-220

Packaging

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

200

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

11.4

I_DM

V_GS

E_AS

Drain current pulsed

(note 1)

Gate to Source Voltage

± 30

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

250

V/ns

E_AR

dv/dt

13.9

5.5

139

P_D

T_STG, T_J

T_L

1.1

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

TO-220

0.9

Symbol

Parameter

Unit

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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