Datasheet > SWI2N60

SWI2N60

更新时间： 2024-09-13 12:20:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	724K
描述
N-channel MOSFET (TO-251 , TO-252)

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中文翻译

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数据手册

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SWI2N60 数据手册

SAMWIN

SW2N60

N-channel MOSFET

BV_DSS: 600V

TO-251

TO-252

Features

I_D

: 2.0A

■ High ruggedness

R_DS(ON): 5.0ohm

■ R_DS(ON)(Max 5.0 Ω)@V_GS=10V

■ Gate Charge (Max 15nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and SMPS. It’s typical application is TV and monitor.

Order Codes

Item

Sales Type

SW I 2N60

SW D 2N60

Marking

SW2N60

Package

TO-251

TO-252

Packaging

TUBE

REEL

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

600

2.0

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

1.2

I_DM

V_GS

E_AS

Drain current pulsed

(note 1)

8.0

Gate to Source Voltage

± 30

154

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

4.7

4.5

P_D

0.37

-55 ~ + 150

W/^oC

^oC

T_STG, T_J

T_L

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

3.2

^oC/W

110

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

中文翻译

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