Datasheet > SWF13N50

SWF13N50

更新时间： 2024-10-02 11:57:27

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	704K
描述
N-channel MOSFET

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数据手册

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SWF13N50 数据手册

SAMWIN

SW13N50

N-channel MOSFET

TO-220F

BV_DSS: 500V

Features

I_D

: 13A

■ High ruggedness

R_DS(ON): 0.48ohm

■ R_DS(ON)(Max 0.48Ω)@V_GS=10V

■ Gate Charge (Typ 32nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a

electronic ballast, and also low power switching mode power appliances.

Order Codes

Item

Sales Type

Marking

Package

TO-220F

Packaging

TUBE

SW F 13N50

SW13N50

Absolute maximum ratings

Symbol

Parameter

Value

500

Unit

V_DSS

I_D

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

13.0

7.13

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

± 30

240

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

8.6

4.5

P_D

T_STG, T_J

T_L

0.25

-55 ~ + 150

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

4.17

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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