SAMWIN
SW10N65
N-channel MOSFET
TO-220F
TO-220
BVDSS : 650V
Features
ID
: 10.0A
■ High ruggedness
RDS(ON) : 1.1ohm
■ RDS(ON) (Max 1.1Ω)@VGS=10V
■ Gate Charge (Typ 47nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
1
2
2
2
3
3
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
Order Codes
Item
1
Sales Type
SW P 10N65
SW F 10N65
Marking
Package
TO-220
Packaging
SW10N65
SW10N65
TUBE
TUBE
2
TO-220F
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-220F
VDSS
ID
Drain to Source Voltage
650
V
A
Continuous Drain Current (@TC=25oC)
10.0
5.7
10.0*
5.7*
Continuous Drain Current (@TC=100oC)
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
36
A
Gate to Source Voltage
± 30
700
15.6
4.5
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
156
50*
0.4
PD
TSTG, TJ
TL
1.25
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
300
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
0.8
TO-220F
2.5
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
0.5
Thermal resistance, Junction to ambient
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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