Datasheet > SWF10N60

SWF10N60

更新时间： 2024-02-23 21:53:10

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	795K
描述
N-channel MOSFET

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SWF10N60 数据手册

SAMWIN

SW10N60

N-channel MOSFET

BV_DSS: 600V

TO-220F

TO-220

Features

I_D

: 10.0A

■ High ruggedness

R_DS(ON): 0.75ohm

■ R_DS(ON)(Max 0.75Ω)@V_GS=10V

■ Gate Charge (Typ 37nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

Order Codes

Item

Sales Type

SW P 10N60

SW F 10N60

Marking

Package

TO-220

Packaging

TUBE

SW10N60

TO-220F

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220

TO-220F

V_DSS

I_D

Drain to Source Voltage

600

Continuous Drain Current (@T_C=25^oC)

10.0

6.0

10.0*

6.0*

Continuous Drain Current (@T_C=100^oC)

I_DM

V_GS

E_AS

Drain current pulsed

(note 1)

Gate to Source Voltage

± 30

745

15.6

4.5

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

156

50*

0.4

P_D

T_STG, T_J

T_L

1.25

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

300

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

0.8

TO-220F

2.5

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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