Datasheet > SW9N50D

SW9N50D

更新时间： 2024-09-24 17:01:07

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	1249K
描述
TO-220F,TO-220,TO-252

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SW9N50D 数据手册

SW9N50D

N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET

Features

TO-252

TO-220F TO-220

BV_DSS: 500V

I_D: 9A

 High ruggedness

 Low R_DS(ON)(Typ 0.68Ω)@V_GS=10V

 Low Gate Charge (Typ 31nC)

 Improved dv/dt Capability

 100% Avalanche Tested

_DS(ON): 0.68Ω

 Application: DC-DC，LED，PC

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 9N50D

SW P 9N50D

SW D 9N50D

Marking

Package

TO-220F

TO-220

TO-252

Packaging

TUBE

SW9N50D

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-220 TO-252

V_DSS

I_D

Drain to source voltage

500

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

5.7*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

462

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

23.3

0.19

200

1.6

181

1.4

P_D

W/^oC

^oC

_STG, T_JOperating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

T_L

300

^oC

purpose, 1/8 from case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

5.36

TO-220 TO-252

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.63

0.69

^oC/W

Apr. 2019. Rev. 4.0

1/7

12 3 4 5 6 7

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