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SW7N65D PDF预览

SW7N65D

更新时间: 2024-04-09 19:03:11
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
8页 1527K
描述
TO-220,TO-251,TO-251N,TO-252

SW7N65D 数据手册

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SW7N65D  
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /  
TO-262N/DFN5*6 MOSFET  
Features  
TO-220  
TO-251  
TO-251N  
TO-252  
BVDSS : 650V  
ID : 7A  
High ruggedness  
Low RDS(ON) (Typ 1.1Ω)  
@VGS=10V  
Low Gate Charge (Typ 30nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
Application:Charge,LED,  
PC Power  
RDS(ON) : 1.1Ω  
1
1
1
1
2
2
2
2
3
3
3
3
D
DFN5*6  
TO-220SF  
TO-220F  
TO-262N  
G
1
8
7
6
5
2
3
4
S
1
1
1
2
2
2
3
3
3
TO-220(F/SF)&TO-251(N)&TO-252&TO-262N1. Gate 2.  
Drain 3. Source  
DFN5*64. Gate 5,6,7,8. Drain 1,2,3,4. Source  
General Description  
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
2
3
4
5
6
7
8
Sales Type  
SW P 7N65D  
SW I 7N65D  
SW N 7N65D  
SW D 7N65D  
SW F 7N65D  
SW MN 7N65D  
SW J 7N65D  
SW HA 7N65D  
Marking  
Package  
TO-220  
TO-251  
TO-251N  
TO-252  
TO-220F  
TO-220SF  
TO-262N  
DFN5*6  
Packaging  
TUBE  
TUBE  
TUBE  
REEL  
TUBE  
TUBE  
TUBE  
REEL  
SW7N65D  
SW7N65D  
SW7N65D  
SW7N65D  
SW7N65D  
SW7N65D  
SW7N65D  
SW7N65D  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
TO- TO-251/TO- TO- TO-220F/TO- TO- DFN5*  
220  
251N  
252  
220SF  
262N  
6
VDSS  
ID  
Drain to source voltage  
650  
7*  
V
A
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
4.4*  
28  
A
IDM  
VGS  
EAS  
Drain current pulsed  
(note 1)  
A
Gate to source voltage  
±30  
430  
40  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
Total power dissipation (@TC=25oC)  
Total power dissipation (@Ta=25oC)  
Derating factor above 25oC  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
5
208.3  
1.67  
173.6  
27.8  
0.22  
186.6  
1.5  
PD  
2.4  
W
1.39  
0.02 W/oC  
Operating junction temperature & storage  
temperature  
TSTG, TJ  
TL  
-55 ~ + 150  
300  
oC  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
oC  
*. Drain current is limited by junction temperature.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Dec. 2018. Rev. 8.0  
1/8  

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