SW7N65D
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /
TO-262N/DFN5*6 MOSFET
Features
TO-220
TO-251
TO-251N
TO-252
BVDSS : 650V
ID : 7A
High ruggedness
Low RDS(ON) (Typ 1.1Ω)
@VGS=10V
Low Gate Charge (Typ 30nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,
PC Power
RDS(ON) : 1.1Ω
1
1
1
1
2
2
2
2
3
3
3
3
D
DFN5*6
TO-220SF
TO-220F
TO-262N
G
1
8
7
6
5
2
3
4
S
1
1
1
2
2
2
3
3
3
TO-220(F/SF)&TO-251(N)&TO-252&TO-262N:1. Gate 2.
Drain 3. Source
DFN5*6:4. Gate 5,6,7,8. Drain 1,2,3,4. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
5
6
7
8
Sales Type
SW P 7N65D
SW I 7N65D
SW N 7N65D
SW D 7N65D
SW F 7N65D
SW MN 7N65D
SW J 7N65D
SW HA 7N65D
Marking
Package
TO-220
TO-251
TO-251N
TO-252
TO-220F
TO-220SF
TO-262N
DFN5*6
Packaging
TUBE
TUBE
TUBE
REEL
TUBE
TUBE
TUBE
REEL
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
SW7N65D
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO- TO-251/TO- TO- TO-220F/TO- TO- DFN5*
220
251N
252
220SF
262N
6
VDSS
ID
Drain to source voltage
650
7*
V
A
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
4.4*
28
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
A
Gate to source voltage
±30
430
40
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
Total power dissipation (@TC=25oC)
Total power dissipation (@Ta=25oC)
Derating factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
5
208.3
1.67
173.6
27.8
0.22
186.6
1.5
PD
2.4
W
1.39
0.02 W/oC
Operating junction temperature & storage
temperature
TSTG, TJ
TL
-55 ~ + 150
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Dec. 2018. Rev. 8.0
1/8