Datasheet > SW7N60K2F

SW7N60K2F

更新时间： 2024-04-09 19:01:16

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	608K
描述
TO-252

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SW7N60K2F 数据手册

SW7N60K2F

N-channel Enhanced mode TO-252 MOSFET

TO-252

BV_DSS: 600V

I_D: 7A

Features

 High ruggedness

_DS(ON): 0.43Ω

 Low R_DS(ON)(Typ 0.43Ω)@V_GS=10V

 Low Gate Charge (Typ 13nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Adaptor, Charger

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW D 7N60K2F

SW7N60K2F

TO-252

REEL

Absolute maximum ratings

Symbol

Parameter

Value

600

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

4.4*

I_DM

V_GS

(note 1)

Gate to source voltage

±30

160

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

P_D

0.7

W/^oC

^oC

T_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Thermal resistance, Junction to case

Value

1.4

Unit

^oC/W

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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