Datasheet > SW630D

SW630D

更新时间： 2024-04-09 19:02:33

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	780K
描述
TO-220,TO-252

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SW630D 数据手册

SW630D

N-channel Enhanced mode TO-220/TO-252 MOSFET

Features

TO-220

TO-252

BV_DSS: 200V

I_D: 9A

 High ruggedness

 Low R_DS(ON)(Typ 0.27Ω)@V_GS=10V

 Low Gate Charge (Typ 20nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

DC-DC

_DS(ON): 0.27Ω

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW P 630D

SW D 630D

Marking

SW630D

Package

TO-220

TO-252

Packaging

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220

TO-252

V_DSS

Drain to source voltage

200

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

5.7*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±20

156

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

138.9

1.1

96.2

0.8

P_D

W/^oC

^oC

_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

300

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

T_L

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

TO-252

1.3

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.9

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

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