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SW601Q PDF预览

SW601Q

更新时间: 2024-04-09 19:03:07
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 511K
描述
SOT-23

SW601Q 数据手册

 浏览型号SW601Q的Datasheet PDF文件第2页浏览型号SW601Q的Datasheet PDF文件第3页浏览型号SW601Q的Datasheet PDF文件第4页浏览型号SW601Q的Datasheet PDF文件第5页浏览型号SW601Q的Datasheet PDF文件第6页 
SW601Q  
N-channel Depletion mode SOT23 MOSFET  
BVDSS : 600V  
ID : 0.02A  
SOT23  
3
Features  
R
DS(ON) : 540Ω  
Low RDS(ON) (Typ 540)@VGS=0V,ID=3mA  
High Switching Speed  
Application:LED,Charger  
1
3
2
2
1. Source 2. Gate 3. Drain  
General Description  
1
The SW601Q is an N-channel power MOSFET using SAMWIN’s  
Advanced technology to provide the customers with high switching  
speed.  
Order Codes  
Item  
1
Sales Type  
SW R 601Q  
Marking  
Package  
SOT23  
Packaging  
REEL  
Date Code  
Absolute maximum ratings  
Symbol  
Parameter  
(Note 2)  
Value  
600  
Unit  
V
VDSS  
VDGX  
ID  
Drain to source voltage  
Drain to gate voltage  
(Note 2)  
600  
V
Continuous drain current (@Tj=25oC)  
Drain current pulsed  
0.02  
A
IDM  
0.08  
A
VGSS  
PD  
Gate to source voltage  
±6  
V
Total power dissipation (@Tj=25oC)  
Junction temperature  
0.5  
W
oC  
oC  
TJ  
+ 150  
-55 ~ + 150  
TSTG  
,
Storage temperature  
Thermal characteristics  
Symbol  
Parameter  
Thermal resistance, Junction to ambient  
Value  
250  
Unit  
Rthja  
oC/W  
Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. TJ=+25°C~+150°C  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 6.0  
1/6  

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