SW601Q
N-channel Depletion mode SOT23 MOSFET
BVDSS : 600V
ID : 0.02A
SOT23
3
Features
R
DS(ON) : 540Ω
Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA
High Switching Speed
Application:LED,Charger
1
3
2
2
1. Source 2. Gate 3. Drain
General Description
1
The SW601Q is an N-channel power MOSFET using SAMWIN’s
Advanced technology to provide the customers with high switching
speed.
Order Codes
Item
1
Sales Type
SW R 601Q
Marking
Package
SOT23
Packaging
REEL
Date Code
Absolute maximum ratings
Symbol
Parameter
(Note 2)
Value
600
Unit
V
VDSS
VDGX
ID
Drain to source voltage
Drain to gate voltage
(Note 2)
600
V
Continuous drain current (@Tj=25oC)
Drain current pulsed
0.02
A
IDM
0.08
A
VGSS
PD
Gate to source voltage
±6
V
Total power dissipation (@Tj=25oC)
Junction temperature
0.5
W
oC
oC
TJ
+ 150
-55 ~ + 150
TSTG
,
Storage temperature
Thermal characteristics
Symbol
Parameter
Thermal resistance, Junction to ambient
Value
250
Unit
Rthja
oC/W
Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2019. Rev. 6.0
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