SW4N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Features
TO-220F TO-251N TO-252
BVDSS : 800V
ID
: 4A
High ruggedness
Low RDS(ON) (Typ 3.2Ω)@VGS=10V
Low Gate Charge (Typ 19nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Adaptor, LED, Industrial Power
R
DS(ON) : 3.2Ω
2
1
1
1
2
2
2
3
3
3
1
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
SW F 4N80D
SW N 4N80D
SW D 4N80D
Marking
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
1
2
3
SW4N80D
SW4N80D
SW4N80D
TUBE
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220F TO-251N TO-252
VDSS
ID
Drain to source voltage
800
4*
V
A
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
2.5*
16
A
IDM
VGS
EAS
(note 1)
A
Gate to source voltage
±30
128
15
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
5
Total power dissipation (@TC=25oC)
Derating factor above 25oC
22
96
PD
STG, TJ
TL
0.18
0.77
W/oC
oC
T
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220F TO-251N TO-252
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
5.6
50
1.3
oC/W
oC/W
87
Apr. 2019. Rev. 5.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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