Datasheet > SW3N90U

SW3N90U

更新时间： 2024-04-09 19:00:38

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	809K
描述
TO-251,TO-251M,TO-252

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SW3N90U 数据手册

SW3N90U

N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET

Features

TO-251M

BV_DSS: 900V

I_D: 3A

TO-251

TO-252

 High ruggedness

 Low R_DS(ON)(Typ 4.8Ω)@V_GS=10V

 Low Gate Charge (Typ 19nC)

 Improved dv/dt Capability

_DS(ON): 4.8Ω

 100% Avalanche Tested

 Application:Adaptor, LED, Industrial Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW I 3N90U

SW MI 3N90U

SW D 3N90U

Marking

Package

TO-251

Packaging

TUBE

SW3N90U

TO-251M

TO-252

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-251 TO-251M TO-252

V_DSS

I_D

Drain to source voltage

900

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

1.9*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

100

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

160.3

1.28

-55 ~ + 150

P_D

T_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-251 TO-251M TO-252

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.78

^oC/W

Apr .2019. Rev. 5.0

1/6

12 3 4 5 6

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