Datasheet > SW3N80A

SW3N80A

更新时间： 2022-04-01 15:45:48

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	954K
描述
N-channel MOSFET

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SW3N80A 数据手册

SAMWIN

SW3N80A

N-channel MOSFET

TO-220F

TO-220

TO-252

BV_DSS: 800V

Features

I_D

: 3.0A

■ High ruggedness

R_DS(ON): 4.5ohm

■ R_DS(ON)(Max 4.5 Ω)@V_GS=10V

■ Gate Charge (Typ 26nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

Order Codes

Item

Sales Type

SW P 3N80A

SW F 3N80A

SW D 3N80A

Marking

Package

TO-220

TO-220F

TO-252

Packaging

SW3N80A

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220/TO-

220F

TO-252

V_DSS

I_D

Drain to Source Voltage

800

Continuous Drain Current (@T_C=25^oC)

3.0

1.9

3.0*

1.9*

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

± 30

310

Gate to Source Voltage

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

4.5

106/39*

P_D

T_STG, T_J

T_L

0.85/0.31

0.43

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220/TO-220F

TO-252

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

1.18/3.21

0.5/-

2.31

^oC/W

Thermal resistance, Junction to ambient

62.5

100

Jan. 2012. Rev. 3.0

1/7

12 3 4 5 6 7

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