Datasheet > SW38N70K

SW38N70K

更新时间： 2024-04-09 19:03:12

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	613K
描述
TO-247

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SW38N70K 数据手册

SW38N70K

N-channel Enhanced mode TO-247 MOSFET

Features

TO-247

BV_DSS: 700V

I_D: 38A

 High ruggedness

 Low R_DS(ON)(Typ 0.1Ω)@V_GS=10V

 Low Gate Charge (Typ 96nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charger，LED，UPS，Servicer

_DS(ON):0.1Ω

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW T 38N70K

SW38N70K

TO-247

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

700

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

38*

I_D

24*

I_DM

V_GS

(note 1)

114

Gate to source voltage

±30

540

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

357.2

2.9

P_D

_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Value

0.35

Unit

^oC/W

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

R_thja

34.6

Apr. 2019. Rev. 5.0

1/6

12 3 4 5 6

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