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SW38N70K PDF预览

SW38N70K

更新时间: 2024-11-15 17:02:11
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 613K
描述
TO-247

SW38N70K 数据手册

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SW38N70K  
N-channel Enhanced mode TO-247 MOSFET  
Features  
TO-247  
BVDSS : 700V  
ID : 38A  
High ruggedness  
Low RDS(ON) (Typ 0.1)@VGS=10V  
Low Gate Charge (Typ 96nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
Application:ChargerLEDUPSServicer  
R
DS(ON) :0.1Ω  
2
1
2
1
3
1. Gate 2. Drain 3. Source  
3
General Description  
This power MOSFET is produced with super junction advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
Packaging  
SW T 38N70K  
SW38N70K  
TO-247  
TUBE  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
700  
Unit  
V
VDSS  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
38*  
A
ID  
24*  
A
IDM  
VGS  
(note 1)  
114  
A
Gate to source voltage  
±30  
540  
V
EAS  
Single pulsed avalanche energy  
Repetitive avalanche energy  
(note 2)  
(note 1)  
mJ  
mJ  
V/ns  
V/ns  
W
EAR  
50  
dv/dt  
dv/dt  
MOSFET dv/dt ruggedness (@VDS=0~400V)  
Peak diode recovery dv/dt  
30  
(note 3)  
20  
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
357.2  
2.9  
PD  
STG, TJ  
TL  
W/oC  
oC  
T
Operating junction temperature & storage temperature  
-55 ~ + 150  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
300  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Rthjc  
Parameter  
Value  
0.35  
Unit  
oC/W  
oC/W  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
Rthja  
34.6  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 5.0  
1/6  

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