Datasheet > SW38N65KF

SW38N65KF

更新时间： 2024-11-15 17:01:39

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	621K
描述
TO-247

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中文翻译

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数据手册

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SW38N65KF 数据手册

SW38N65KF

N-channel Enhanced mode TO-247 MOSFET

TO-247

BV_DSS: 650V

I_D: 38A

Features

 High ruggedness

_DS(ON): 95mΩ

 Low R_DS(ON)(Typ 95mΩ)@V_GS=10V

 Low Gate Charge (Typ 99nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, UPS, Charger, Servicer

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW T 38N65KF

SW38N65KF

TO-247

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

650

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

38*

I_D

24*

I_DM

V_GS

(note 1)

114

Gate to source voltage

±30

990

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

176

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

313

P_D

_STG, T_J

T_L

2.5

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.4

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

中文翻译

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