SW38N65K2F
N-channel Enhanced mode TO-247/TO-220FB MOSFET
Features
BVDSS : 650V
ID : 38A
TO-247
TO-220FB
High ruggedness
Low RDS(ON) (Typ 83mΩ)@VGS=10V
Low Gate Charge (Typ 71nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge, LED , Servicer, UPS
RDS(ON) : 83mΩ
2
1
1
2
2
3
1
3
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-247
Packaging
SW T 38N65K2F
SW X 38N65K2F
SW38N65K2F
SW38N65K2F
TUBE
TUBE
2
TO-220FB
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-247
TO-220FB
VDSS
ID
Drain to source voltage
Continuous drain current (@TC=25oC)
650
38*
24*
152
± 30
620
62
V
A
Continuous drain current (@TC=100oC)
Drain current pulsed
A
IDM
VGS
(note 1)
A
Gate to source voltage
V
EAS
Single pulsed avalanche energy
Repetitive avalanche energy
MOSFET dv/dt ruggedness (@VDS=0~400V)
Peak diode recovery dv/dt
(note 2)
(note 1)
mJ
mJ
V/ns
V/ns
W
EAR
dv/dt
dv/dt
30
(note 3)
20
Total power dissipation (@TC=25oC)
Derating factor above 25oC
260
2.1
184
1.5
PD
W/oC
oC
TSTG, TJ
TL
Operating junction temperature & storage temperature
-55 ~ + 150
300
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-247
TO-220FB
0.68
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.48
34
oC/W
oC/W
57
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2018. Rev. 3.0
1/6