Datasheet > SW38N65K2

SW38N65K2

更新时间： 2024-11-15 17:01:23

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	654K
描述
TO-247

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中文翻译

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数据手册

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SW38N65K2 数据手册

SW38N65K2

N-channel Enhanced mode TO-247 MOSFET

BV_DSS: 650V

I_D: 38A

TO-247

Features

 High ruggedness

_DS(ON): 79mΩ

 Low R_DS(ON)(Typ 79mΩ)@V_GS=10V

 Low Gate Charge (Typ 71nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Charger, LED , Servicer, UPS

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

TO-247

Packaging

SW T 38N65K2

SW38N65K2

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

650

38*

24*

114

±30

817

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_D

I_DM

V_GS

(note 1)

Gate to source voltage

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

291

2.3

P_D

W/^oC

^oC

T_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

300

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

T_L

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.43

32.6

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

中文翻译

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