Datasheet > SW35N10V

SW35N10V

更新时间： 2024-11-15 17:01:51

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	706K
描述
DFN5X6

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SW35N10V 数据手册

SW35N10V

N-channel Enhanced mode DFN5*6 MOSFET

Features

DFN5*6

BV_DSS: 100V

 High ruggedness

 Low R_DS(ON)(Typ 12.4mΩ)@V_GS=4.5V

(Typ 11.6mΩ)@V_GS=10V

 Low Gate Charge (Typ 117nC)

 Improved dv/dt Capability

I_D

: 35A

R_DS(ON): 12.4mΩ@V_GS=4.5V

11.6mΩ@V_GS=10V

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

4.Gate 5,6,7,8.Drain 1,2,3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

DFN5*6

Packaging

REEL

SW HA 35N10V

SW35N10V

Absolute maximum ratings

Symbol

Parameter

Value

100

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_a=25^oC)

Continuous drain current (@T_a=70^oC)

Drain current pulsed

35*

I_D

I_DM

V_GS

E_AS

(note 1)

140

Gate to source voltage

±20

392

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_a=25^oC)

Derating factor above 25^oC

2.7

P_D

0.02

-55 ~ + 150

W/^oC

^oC

_STG, T_J

Operating junction temperature & storage temperature

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thja

Parameter

Thermal resistance, Junction to ambient

Value

Unit

^oC/W

Note: R_thjais the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R_thjcis guaranteed by design while R_thcais determined by the user's

board design.

DFN5*6 R_thja: 47^oC/W on a 1 in²pad of 2oz copper.

Apr. 2019. Rev. 5.0

1/6

12 3 4 5 6

中文翻译

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