Datasheet > SW22N65D

SW22N65D

更新时间： 2024-11-11 17:01:03

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	643K
描述
TO-247

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中文翻译

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数据手册

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SW22N65D 数据手册

SW22N65D

N-channel Enhanced mode TO-247 MOSFET

TO-247

BV_DSS: 650V

I_D: 22A

Features

 High ruggedness

_DS(ON): 0.22Ω

 Low R_DS(ON)(Typ 0.22Ω)@V_GS=10V

 Low Gate Charge (Typ 123nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Charger, PC Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW T 22N65D

SW22N65D

TO-247

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

650

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

22*

I_D

14*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

1327

107

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

278

P_D

2.2

W/^oC

^oC

_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

T_L

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.45

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

中文翻译

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