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SW226N PDF预览

SW226N

更新时间: 2024-09-21 08:57:39
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
7页 722K
描述
N-channel MOSFET

SW226N 数据手册

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SAMWIN  
SW226N  
N-channel MOSFET  
TO-251  
TO-252  
BVDSS : 600V  
Features  
ID  
: 4.0A  
High ruggedness  
RDS(ON) : 2.3ohm  
RDS(ON) (Max 2.3 )@VGS=10V  
Gate Charge (Typ 18nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
1
2
3
1
2
3
2
1. Gate 2. Drain 3. Source  
1
General Description  
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.  
This technology enable power MOSFET to have better characteristics, such as fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics. This power MOSFET is usually used at high efficient DC to DC  
converter block and switch mode power supply.  
Order Codes  
Item  
1
Sales Type  
SW I 226N  
SW D 226N  
Marking  
SW226N  
SW226N  
Package  
TO-251  
TO-252  
Packaging  
TUBE  
REEL  
2
Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
VDSS  
ID  
Drain to Source Voltage  
600  
4.0  
V
A
Continuous Drain Current (@TC=25oC)  
Continuous Drain Current (@TC=100oC)  
Drain current pulsed  
2.2  
A
IDM  
VGS  
EAS  
(note 1)  
16  
A
Gate to Source Voltage  
± 30  
220  
V
Single pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak diode Recovery dv/dt  
Total power dissipation (@TC=25oC)  
Derating Factor above 25oC  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
10.6  
4.5  
54  
PD  
TSTG, TJ  
TL  
0.43  
-55 ~ + 150  
W/oC  
oC  
Operating Junction Temperature & Storage Temperature  
Maximum Lead Temperature for soldering  
purpose, 1/8 from Case for 5 seconds.  
300  
oC  
Thermal characteristics  
Symbol  
Parameter  
Value  
Typ.  
Unit  
Min.  
Max.  
2.3  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
oC/W  
oC/W  
110  
Mar. 2011. Rev. 2.0  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
1/7  

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