SW20N50D
N-channel Enhanced mode TO-220F/TO-247 MOSFET
Features
TO-220F
TO-247
BVDSS : 500V
ID : 20A
High ruggedness
Low RDS(ON) (Typ 0.19Ω)@VGS=10V
Low Gate Charge (Typ 82nC)
Improved dv/dt Capability
100% Avalanche Tested
R
DS(ON) : 0.19Ω
2
1
1
2
2
Application:Charger, Adaptor, LED
3
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
SW F 20N50D
SW T 20N50D
Marking
Package
Packaging
SW20N50D
SW20N50D
TO-220F
TO-247
TUBE
TUBE
2
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220F
TO-247
VDSS
ID
Drain to source voltage
500
20*
13*
80
V
A
A
A
V
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
IDM
(note 1)
VGS
Gate to source voltage
±30
EAS
Single pulsed avalanche energy
Repetitive avalanche energy
(note 2)
1260
mJ
mJ
EAR
(note 1)
(note 3)
104
5
dv/dt
Peak diode recovery dv/dt
V/ns
W
Total power dissipation (@Tc=25oC)
Derating factor above 25oC
42
272
2.2
PD
0.3
W/oC
oC
TSTG, TJ
TL
Operating junction temperature & storage temperature
-55 ~ + 150
300
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220F
TO-247
0.46
35
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
3.0
47
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2019. Rev. 4.0
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