Datasheet > SW20N50D

SW20N50D

更新时间： 2024-11-20 17:01:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	803K
描述
TO-220F,TO-247

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SW20N50D 数据手册

SW20N50D

N-channel Enhanced mode TO-220F/TO-247 MOSFET

Features

TO-220F

TO-247

BV_DSS: 500V

I_D: 20A

 High ruggedness

 Low R_DS(ON)(Typ 0.19Ω)@V_GS=10V

 Low Gate Charge (Typ 82nC)

 Improved dv/dt Capability

 100% Avalanche Tested

_DS(ON): 0.19Ω

 Application:Charger, Adaptor, LED

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 20N50D

SW T 20N50D

Marking

Package

Packaging

SW20N50D

TO-220F

TO-247

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-247

V_DSS

I_D

Drain to source voltage

500

20*

13*

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

(note 1)

V_GS

Gate to source voltage

±30

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

1260

E_AR

(note 1)

(note 3)

104

dv/dt

Peak diode recovery dv/dt

V/ns

Total power dissipation (@Tc=25^oC)

Derating factor above 25^oC

272

2.2

P_D

0.3

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

-55 ~ + 150

300

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-247

0.46

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

3.0

^oC/W

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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