Datasheet > SW1N80A

SW1N80A

更新时间： 2024-09-23 08:57:43

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	711K
描述
N-channel MOSFET

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中文翻译

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数据手册

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SW1N80A 数据手册

SAMWIN

SW1N80A

N-channel MOSFET

BV_DSS: 800V

Features

TO-92

I_D

: 1.0A

■ High ruggedness

R_DS(ON):16ohm

■ R_DS(ON)(Max 16 Ω)@V_GS=10V

■ Gate Charge (Max 7nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

Order Codes

Item

Sales Type

Marking

Package

TO-92

Packaging

TAPE

SW C 1N80A

SW1N80A

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

800

1.0

0.6

3.0

± 30

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

0.3

4.5

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

P_D

0.023

W/^oC

T_STG, T_J

T_L

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

300

^oC

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thCS

R_thjA

Thermal resistance, Junction to Lead Max

Thermal resistance, Junction to ambient

^oC/W

120

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

中文翻译

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