Datasheet > SW1N60DC

SW1N60DC

更新时间： 2024-09-24 17:01:51

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	911K
描述
TO-252,SOT-223

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SW1N60DC 数据手册

SW1N60DC

N-channel Enhanced mode TO-252/SOT223 MOSFET

Features

TO-252

SOT223

BV_DSS: 600V

I_D: 1A

 High ruggedness

 Low R_DS(ON)(Typ 7Ω)@V_GS=10V

 Low Gate Charge (Typ6.3 nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charger,Adaptor,LED

R_DS(ON): 7Ω

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW D 1N60DC

SW SA 1N60DC

Marking

Package

TO-252

SOT223

Packaging

REEL

SW1N60DC

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-252

SOT223

V_DSS

I_D

Drain to source voltage

600

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

0.6*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

125

1.0

9.26

0.07

P_D

W/^oC

^oC

_STG, T_JOperating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

T_L

300

^oC

purpose, 1/8 from case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-252

SOT223

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

1.0

13.5

^oC/W

100

110

Apr. 2019. Rev. 5.0

1/6

12 3 4 5 6

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