Datasheet > SW1N60

SW1N60

更新时间： 2024-01-08 22:37:35

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	733K
描述
N-channel MOSFET

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SW1N60 数据手册

SAMWIN

SW1N60

N-channel MOSFET

BV_DSS: 600V

Features

TO-251

TO-252

TO-126

I_D

: 1.0A

■ High ruggedness

R_DS(ON): 12ohm

■ R_DS(ON)(Max 12 Ω)@V_GS=10V

■ Gate Charge (Max 6nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1 2

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

Order Codes

Item

Sales Type

SW L 1N60

SW I 1N60

SW D 1N60

Marking

SW1N60

Package

TO-126

TO-251

TO-252

Packaging

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-126

TO-251

TO-252

V_DSS

I_D

Drain to Source Voltage

600

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

1.0

0.65

4.0

1.0

0.65

4.0

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

± 30

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

0.3

4.5

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

P_D

0.23

W/^oC

^oC

T_STG, T_JOperating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

T_L

300

^oC

purpose, 1/8 from Case for 5 seconds.

Thermal characteristics

Maximum Value

Symbol

Parameter

Unit

TO-126

TO-251

4.2

TO-252

R_thjC

R_thCS

R_thjA

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

^oC/W

110

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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