Datasheet > SW18N60D

SW18N60D

更新时间： 2024-04-09 19:02:53

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	814K
描述
TO-220F

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数据手册

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SW18N60D 数据手册

SW18N60D

N-channel Enhanced mode TO-220F MOSFET

TO-220F

BV_DSS: 600V

I_D: 18A

Features

 High ruggedness

_DS(ON): 0.34Ω

 Low R_DS(ON)(Typ 0.34Ω)@V_GS=10V

 Low Gate Charge (Typ 79nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Charger, PC Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW F 18N60D

SW18N60D

TO-220F

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

600

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

18*

I_D

11*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

680

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

P_D

_STG, T_J

T_L

0.32

-55 ~ + 150

W/^oC

^oC

Operating junction temperature & storage temperature

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

3.1

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

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