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SW170R15ET PDF预览

SW170R15ET

更新时间: 2024-09-29 17:01:15
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 614K
描述
TO-220FB

SW170R15ET 数据手册

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SW170R15ET  
N-channel Enhanced mode TO-220FB MOSFET  
Features  
BVDSS : 150V  
ID : 66A  
TO-220FB  
High ruggedness  
Low RDS(ON) (Typ 15.7m)@VGS=10V  
Low Gate Charge (Typ 164nC)  
Improved dv/dt Capability  
RDS(ON) : 15.7m  
100% Avalanche Tested  
Application: Synchronous Rectification,  
Li Battery Protect Board , Inverter  
D
1
2
3
G
1. Gate 2. Drain 3. Source  
General Description  
S
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
Packaging  
TUBE  
SW X 170R15ET  
SW170R15ET  
TO-220FB  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
150  
Unit  
V
VDSS  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
66*  
A
ID  
47*  
A
IDM  
VGS  
EAS  
(note 1)  
264  
A
Gate to source voltage  
±20  
648  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
54  
5
Total power dissipation (@Ta=25oC)  
Derating factor above 25oC  
192  
PD  
1.5  
W/oC  
oC  
T
STG, TJ  
Operating junction temperature & storage temperature  
-55 ~ + 150  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
TL  
300  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Parameter  
Value  
Unit  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
0.65  
51  
oC/W  
oC/W  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 3.0  
1/6  

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