Datasheet > SW16N65K

SW16N65K

更新时间： 2024-04-09 19:01:30

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	1143K
描述
TO-220,TO-220F,TO-263

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中文翻译

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SW16N65K 数据手册

SW16N65K

N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET

Features

TO-220F

TO-263

TO-220

BV_DSS: 650V

I_D: 16A

 High ruggedness

 Low R_DS(ON)(Typ 0.23Ω)@V_GS=10V

 Low Gate Charge (Typ 43nC)

 Improved dv/dt Capability

 100% Avalanche Tested

_DS(ON):0.23Ω

 Application:LED, Charger, PC Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW P 16N65K

SW F 16N65K

SW B 16N65K

Marking

Package

Packaging

SW16N65K

TO-220

TO-220F

TO-263

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220

TO-220F

TO-263

V_DSS

I_D

Drain to source voltage

Continuous drain current (@T_C=25^oC)

650

16*

Continuous drain current (@T_C=100^oC)

Drain current pulsed

10.1*

I_DM

V_GS

(note 1)

Gate to source voltage

±30

300

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 2)

(note 1)

V/ns

E_AR

dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

271.7

2.2

32.2

0.26

-55 ~ + 150

192.3

1.5

P_D

_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

0.46

TO-220F

TO-263

0.65

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

3.88

45.1

^oC/W

55.4

Apr. 2019. Rev. 5.0

1/7

12 3 4 5 6 7

中文翻译

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