Datasheet > SW160R02VT

SW160R02VT

更新时间： 2024-10-02 17:01:43

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	754K
描述
DFN3X3

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SW160R02VT 数据手册

SW160R02VT

N-channel Enhanced mode DFN3*3 MOSFET

Features

BV_DSS: 20V

I_D: 16A

DFN3*3

 High ruggedness

 Low R_DS(ON)(Typ 12.3mΩ)@V_GS=2.5V

(Typ 9.4mΩ)@V_GS=4.5V

 Low Gate Charge (Typ 15.4nC)

 Improved dv/dt Capability

 100% Avalanche Tested

R_DS(ON): 12.3mΩ@V_GS=2.5V

9.4mΩ@V_GS=4.5V

 Application:DC-DC Converter, Inverter,

Synchronous Rectification

DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

DFN3*3

Packaging

REEL

SW H 160R02VT

SW160R02V

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

16*

I_D

10*

I_DM

V_GS

(note 1)

Gate to source voltage

±10

dv/dt

Peak diode recovery dv/dt

(note 3)

V/ns

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

2.97

0.02

-55 ~ + 150

P_D

W/^oC

^oC

_STG, T_J

Operating junction temperature & storage temperature

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thja

Parameter

Thermal resistance, Junction to ambient

Value

Unit

^oC/W

Note: R_thjais the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R_thjcis guaranteed by design while R_thcais determined by the user's

board design. 42^oC/W on a 1 in²pad of 2oz copper.

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

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