Datasheet > SW15P03

SW15P03

更新时间： 2024-09-29 17:00:47

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	728K
描述
SOP-8,DFN3X3

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中文翻译

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SW15P03 数据手册

SW15P03

P-channel Enhanced mode SOP8/DFN3*3 MOSFET

Features

BV_DSS: -30V

I_D: -15A

SOP8

DFN3*3

 High ruggedness

 Low R_DS(ON)(Typ 14mΩ)@V_GS=-4.5V

Low R_DS(ON)(Typ 10mΩ)@V_GS=-10V

 Low Gate Charge (Typ 48nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Adaptor Input Switch

for Notebook PC

R_DS(ON): 14mΩ @V_GS=-4.5V

10mΩ @V_GS=-10V

SOP8/DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

Order Codes

Item

Sales Type

SW K 15P03

SW H 15P03

Marking

Package

SOP8

Packaging

SW15P03

REEL

DFN3*3

Absolute maximum ratings

Value

Symbol

Parameter

Unit

SOP8

DFN3*3

V_DSS

I_D

Drain to source voltage

-30

-15*

-9.5*

-60

±25

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

Single pulsed avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 3)

V/ns

dv/dt

Total power dissipation (@T_a=25^oC)

Derating factor above 25^oC

2.5

2.1

P_D

0.02

0.017

W/^oC

^oC

T_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

R_thja

Parameter

Thermal resistance, Junction to ambient（note）

Unit

SOP8

DFN3*3

^oC/W

Note: R_thjais the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R_thjcis guaranteed by design while R_thcais determined by the user's

board design.

SOP8： 50^oC/W on a 1 in²pad of 2oz copper.

DFN3*3：60^oC/W on a 1 in2 pad of 2oz copper.

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

中文翻译

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SW15PCN020	IXYS	获取价格	Rectifier Diode, 1 Element, 30A, 1500V V(RRM),
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