5秒后页面跳转
SW15N04V PDF预览

SW15N04V

更新时间: 2024-04-09 19:00:53
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 1004K
描述
SOP-8,DFN5X6

SW15N04V 数据手册

 浏览型号SW15N04V的Datasheet PDF文件第2页浏览型号SW15N04V的Datasheet PDF文件第3页浏览型号SW15N04V的Datasheet PDF文件第4页浏览型号SW15N04V的Datasheet PDF文件第5页浏览型号SW15N04V的Datasheet PDF文件第6页 
SW15N04V  
N-channel Enhanced mode SOP8/DFN5*6 MOSFET  
Features  
BVDSS : 40V  
DFN5*6  
SOP8  
5
ID  
: 15A  
High ruggedness  
Low RDS(ON) (Typ 6.5m)@VGS=4.5V  
(Typ 5.8m)@VGS=10V  
Low Gate Charge (Typ 49nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
Application: DC-DC Converter,  
Motor Control, Power Supplies  
6
1
2
3
4
8
7
6
5
7
8
RDS(ON) : 6.5m@ VGS=4.5V  
4
3
5.8m@ VGS=10V  
2
1
D
SOP8/DFN5*6: 4.Gate 5,6,7,8.Drain  
1,2,3.Source  
G
S
General Description  
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
Sales Type  
Marking  
Package  
Packaging  
1
2
SW K 15N04V  
SW15N04V  
SW15N04V  
SOP8  
REEL  
REEL  
SW HA 15N04V  
DFN5*6  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
SOP8  
DFN5*6  
VDSS  
ID  
Drain to source voltage  
40  
15*  
9.5*  
60  
V
A
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
A
IDM  
VGS  
EAS  
(note 1)  
A
Gate to source voltage  
±20  
236  
9
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
5
Total power dissipation (@Ta=25oC)  
Derating factor above 25oC  
2.9  
3.2  
PD  
0.023  
0.026  
W/oC  
oC  
TSTG, TJ  
Operating junction temperature & storage temperature  
-55 ~ + 150  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Value  
Symbol  
Rthja  
Parameter  
Thermal resistance, Junction to ambient  
Unit  
SOP8  
43  
DFN5*6  
39  
oC/W  
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d  
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's  
board design.  
SOP843oC/W on a 1 in2 pad of 2oz copper.  
DFN5*639oC/W on a 1 in2 pad of 2oz copper.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Apr. 2019. Rev. 4.0  
1/6  

与SW15N04V相关器件

型号 品牌 获取价格 描述 数据表
SW15N06V SEMIPOWER

获取价格

SOP-8
SW15N50 SEMIPOWER

获取价格

TO-220F
SW15N50D SEMIPOWER

获取价格

TO-220SF
SW15N50DA SEMIPOWER

获取价格

TO-220F
SW15N65D SEMIPOWER

获取价格

TO-220F
SW15N65J SEMIPOWER

获取价格

TO-220SF,TO-252
SW15P02 SEMIPOWER

获取价格

TO-251,TO-252,DFN3*3,DFN5*6
SW15P03 SEMIPOWER

获取价格

SOP-8,DFN3X3
SW15PCN012 IXYS

获取价格

DIODE RECTIFIER DIODE,1.5KV V(RRM),DO-4, Rectifier Diode
SW15PCN020 LITTELFUSE

获取价格

Rectifier Diode, 1 Element, 30A, 1500V V(RRM),