Datasheet > SW13N70D

SW13N70D

更新时间： 2024-04-09 18:59:09

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	592K
描述
TO-220F

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SW13N70D 数据手册

SW13N70D

N-channel Enhanced mode TO-220F MOSFET

Features

TO-220F

BV_DSS: 700V

 High ruggedness

 Low R_DS(ON)(Typ 0.7Ω)@V_GS=10V

 Low Gate Charge (Typ 52nC)

 Improved dv/dt Capability

 100% Avalanche Tested

I_D

: 13A

R_DS(ON): 0.7Ω

 Application: LED, TV-Power, Charger

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

TO-220F

Packaging

SW F 13N70D

SW13N70D

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

700

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

13*

I_D

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

± 30

385

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

41.7

0.33

-55 ~ + 150

P_D

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

^oC/W

44.5

Jul. 2018. Rev. 2.0

1/6

12 3 4 5 6

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